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| APT1001R1HVR 1000V 9A 1.100 POWER MOS V (R) TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. V(R) * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-258 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT1001R1HVR UNIT Volts Amps 1000 9 36 30 40 200 1.6 -55 to 150 300 9 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 9 1.100 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5812 Rev A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT1001R1HVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3050 280 135 150 16 70 12 11 55 12 3660 390 200 225 24 105 24 22 85 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns C 9 36 1.3 700 9 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.62 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 29.88mH, R = 25, Peak I = 9A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.7 0.5 , THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.01 0.005 0.01 SINGLE PULSE 050-5812 Rev A Z 0.001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT1001R1HVR 20 ID, DRAIN CURRENT (AMPERES) VGS=6V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 20 VGS=15V VGS=6V & 10V 5V 16 16 12 4.5V 8 12 4.5V 8 4 4V 3.5V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 40 4 4V 3.5V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 1.5 V GS ID, DRAIN CURRENT (AMPERES) NORMALIZED TO = 10V @ 0.5 I [Cont.] D TJ = +125C 30 1.4 VGS=10V 1.2 VGS=20V 1.0 20 TJ = +125C 10 TJ = -55C TJ = +25C 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 10 0 0.8 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25 I = 0.5 I [Cont.] D D GS 1.15 ID, DRAIN CURRENT (AMPERES) 8 1.10 6 1.05 4 1.00 2 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) V = 10V 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 0.90 -50 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5812 Rev A 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.6 -50 APT1001R1HVR 40 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10S 100S C, CAPACITANCE (pF) 11,000 5,000 10 5 1mS Ciss 1,000 Coss 500 Crss 1 .5 TC =+25C TJ =+150C SINGLE PULSE 10mS 100mS DC 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 50 50 .1 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 VDS=100V VDS=200V 12 VDS=500V 8 16 TJ =+150C 10 5 TJ =+25C 1 .5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE .1 TO-258 Package Outline 1.14 (.045) 0.88 (.035) 17.65 (.695) 17.39 (.685) 8.89 (.350) 8.63 (.340) 4.19 (.165) 3.94 (.155) 21.21 (.835) 20.70 (.815) 13.84 (.545) 13.58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.140) BSC 6.86 (.270) 6.09 (.240) 1.65 (.065) Dia. Typ. 1.39 (.055) 3 Leads 5.08 (.200) BSC 050-5812 Rev A Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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